Power Transistors
2SC3976
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0...
Power
Transistors
2SC3976
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C)
Ratings 800 800 500 8 25 12 6 150 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
26.0±0.5
10.0
1.5
2.0
4.0
1.5
20.0±0.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
2.0±0.3 3.0±0.3 1.0±0.2
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
1:Base 2:Collector 3:Emitter TOP–3L Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 7A IC = 7A, IB = 1.4A IC = 7A, IB = 1.4A VCE = 10V, IC = 1A, f = 1MHz IC = 7A, IB1 = 1.4A, IB2 = –2.8A, VCC = 200V 15 1.0 3.0 0.3 500 15 8...
