Power Transistors
2SC3981, 2SC3981A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed swit...
Power
Transistors
2SC3981, 2SC3981A
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q q
0.7
q
16.2±0.5 12.5 3.5 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 900 1000 900 1000 800 7 10 5 3 80 3 150 –55 to +150 Unit V
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC3981 2SC3981A 2SC3981 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
emitter voltage 2SC3981A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V V A A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3981 2SC3981A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 ...