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SP8K22 Dataheets PDF



Part Number SP8K22
Manufacturers Rohm
Logo Rohm
Description Switching
Datasheet SP8K22 DatasheetSP8K22 Datasheet (PDF)

SP8K22 Transistor Switching (45V, 4.5A) SP8K22 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 5.0±0.2 (5) (8) 6.0±0.3 3.9±0.15 zApplications Power switching , DC / DC converter , Inverter zStructure Silicon N-channel MOS FET 1.5±0.1 0.15 1.27 0.4±0.1 0.1 Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 www.DataSheet.co.kr zAbsolute maximum ratings (T.

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SP8K22 Transistor Switching (45V, 4.5A) SP8K22 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 5.0±0.2 (5) (8) 6.0±0.3 3.9±0.15 zApplications Power switching , DC / DC converter , Inverter zStructure Silicon N-channel MOS FET 1.5±0.1 0.15 1.27 0.4±0.1 0.1 Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 www.DataSheet.co.kr zAbsolute maximum ratings (Ta=25°C) It is the same ratings for the Tr. 1 and Tr. 2. Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Chanel temperature Range of Storage temperature *1 PW ≦10µs、Duty cycle≦1% *2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Unit 45 V 20 V ±4.5 A *1 ±18 A  1 A *1 18 A   *2 2 W/TOTAL *2 1.4 W/ELEMENT o 150 C o -55 to +150 C zEquivalent circuit (8) (7) (6) (5) Max.1.75 0.5±0.1 (1) (4) 0.2±0.1 (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. 1/4 Datasheet pdf - http://www.DataSheet4U.net/ SP8K22 Transistor zElectrical characteristics (Ta=25°C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge * pulsed Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) * |Yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd * Min. - 45 - 1.0 - - - 3.5 - - - - - - - - - - Typ. - - - - 33 41 46 - 550 140 70 12 18 42 12 6.8 2.0 2.9 Max. 10 - 1 2.5 46 57 64 - - - - - - - - 9.6 - - Unit µA V µA V mΩ S pF Condition VGS=20V/VDS=0V ID=1mA/VGS=0V VDS=45V/VGS=0V VDS=10V/ID=1mA ID=4.5A/VGS=10V ID=4.5A/VGS=4.5V ID=4.5A/VGS=4.0V VDS=10V/ID=4.5A VDS=10V VGS=0V f=1MHz VDD=25V ID=2.5A VGS=10V RL=10Ω/RG=10Ω VDD=25V/ID=4.5A VGS=5V RL=5.6Ω/RG=10Ω * * * * * * * ns nC Body diode characteristics (Source-Drain) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Forward voltage * pulsed Symbol VSD * Min. - Typ. www.DataSheet.co.kr - Max. 1.2 Unit V Condition IS=4.5A/VGS=0V 2/4 Datasheet pdf - http://www.DataSheet4U.net/ SP8K22 Transistor zElectrical characteristic curves 10 VDS=10V pulsed Drain Currnt : ID [A] 1000 Ta=125 C o o o o 1000 75 C 25 C -25 C Static Drain-Source On-State Resistance  RDS(on) [mΩ] 1 Ta=125 C    75 C    25 C o o o o 100 Static Drain-Source On-State Resistance  RDS(on) [mΩ] VGS=10V pulsed VGS=4.5V pulsed 100 0.1   -25 C 10 10 Ta=125oC 75oC 25oC -25oC 0.01 1.0 1.5 2.0 2.5 3.0 3.5 1 0.01 1 0.1 1 10 0.01 0.1 1 10 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 VGS=4V pulsed 200 Ta=25oC pulsed Static Drain-Source On-State Resistance  RDS(on) [m Ω] 10 VGS=0V pulsed Static Drain-Source On-State Resistance  RDS(on) [mΩ] 150 Source Current : Is [A] 100 1 Ta=125oC 75oC 25oC -25oC 100 10 Ta=125 C 75oC 25 C -25oC o o ID=4.5A 7 0.1 50 ID=2.25A 0 1 0.01 0.01 www.DataSheet.co.kr 0.1 1 10 0 5 10 15 0 0.5 1 1.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ta=25oC f=1MHz VGS=0V 1000 Ciss Switching Time : t [ns] 1000 Capacitance : C [pF] tf RG=10Ω Pulsed Gate-Source Voltage : VGS [V] Ta=25oC VDD=25V VGS=10V 10 Ta=25oC VDD=25V ID=4.5A RG=10Ω Pulsed 8 6 4 100 td(off) td(on) Coss 100 10 tr 2 Crss 10 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 2 4 6 8 10 12 Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 Datasheet pdf - http://www.DataSheet4U.net/ SP8K22 Transistor zMeasurement circuits Pulse Width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID.


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