Document
SP8K22
Transistor
Switching (45V, 4.5A)
SP8K22
zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
(5) (8)
6.0±0.3 3.9±0.15
zApplications Power switching , DC / DC converter , Inverter
zStructure Silicon N-channel MOS FET
1.5±0.1 0.15
1.27
0.4±0.1 0.1 Each lead has same dimensions
zPackaging dimensions
Package Code
Basic ordering unit(pieces)
Taping TB 2500
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zAbsolute maximum ratings (Ta=25°C) It is the same ratings for the Tr. 1 and Tr. 2.
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Chanel temperature Range of Storage temperature *1 PW ≦10µs、Duty cycle≦1% *2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Unit 45 V 20 V ±4.5 A *1 ±18 A 1 A *1 18 A *2 2 W/TOTAL *2 1.4 W/ELEMENT o 150 C o -55 to +150 C
zEquivalent circuit
(8) (7) (6) (5)
Max.1.75
0.5±0.1
(1) (4)
0.2±0.1
(8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
1/4
Datasheet pdf - http://www.DataSheet4U.net/
SP8K22
Transistor
zElectrical characteristics (Ta=25°C) It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge * pulsed Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) * |Yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd * Min. - 45 - 1.0 - - - 3.5 - - - - - - - - - - Typ. - - - - 33 41 46 - 550 140 70 12 18 42 12 6.8 2.0 2.9 Max. 10 - 1 2.5 46 57 64 - - - - - - - - 9.6 - - Unit µA V µA V mΩ S pF Condition VGS=20V/VDS=0V ID=1mA/VGS=0V VDS=45V/VGS=0V VDS=10V/ID=1mA ID=4.5A/VGS=10V ID=4.5A/VGS=4.5V ID=4.5A/VGS=4.0V VDS=10V/ID=4.5A VDS=10V VGS=0V f=1MHz VDD=25V ID=2.5A VGS=10V RL=10Ω/RG=10Ω VDD=25V/ID=4.5A VGS=5V RL=5.6Ω/RG=10Ω
* * * * * * *
ns
nC
Body diode characteristics (Source-Drain) It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter Forward voltage * pulsed Symbol VSD * Min. - Typ.
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-
Max. 1.2
Unit V
Condition IS=4.5A/VGS=0V
2/4
Datasheet pdf - http://www.DataSheet4U.net/
SP8K22
Transistor
zElectrical characteristic curves
10
VDS=10V pulsed
Drain Currnt : ID [A]
1000
Ta=125 C
o o o o
1000
75 C 25 C -25 C
Static Drain-Source On-State Resistance RDS(on) [mΩ]
1
Ta=125 C 75 C 25 C
o o o
o
100
Static Drain-Source On-State Resistance RDS(on) [mΩ]
VGS=10V pulsed
VGS=4.5V pulsed
100
0.1
-25 C
10
10
Ta=125oC 75oC 25oC -25oC
0.01 1.0
1.5
2.0
2.5
3.0
3.5
1 0.01
1
0.1
1
10
0.01
0.1
1
10
Gate-Source Voltage : VGS [V]
Drain Current : ID [A]
Drain Current : ID [A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1)
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2)
1000
VGS=4V pulsed
200
Ta=25oC pulsed
Static Drain-Source On-State Resistance RDS(on) [m Ω]
10
VGS=0V pulsed
Static Drain-Source On-State Resistance RDS(on) [mΩ]
150
Source Current : Is [A]
100
1
Ta=125oC 75oC 25oC -25oC
100
10
Ta=125 C 75oC 25 C -25oC
o
o
ID=4.5A
7
0.1
50
ID=2.25A
0
1 0.01
0.01
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0.1
1
10
0
5
10
15
0
0.5
1
1.5
Drain Current : ID [A]
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3)
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
10000
Fig.6 Source-Current vs. Source-Drain Voltage
10000
Ta=25oC f=1MHz VGS=0V
1000
Ciss
Switching Time : t [ns]
1000
Capacitance : C [pF]
tf
RG=10Ω Pulsed
Gate-Source Voltage : VGS [V]
Ta=25oC VDD=25V VGS=10V
10
Ta=25oC VDD=25V ID=4.5A RG=10Ω Pulsed
8
6 4
100
td(off) td(on)
Coss 100
10
tr
2
Crss 10 0.01 0.1 1 10 100
Drain-Source Voltage : VDS [V]
1 0.01 0.1 1 10
Drain Current : ID [A]
0 0 2 4 6 8 10 12
Total Gate Charge : Qg [nC]
Fig.7 Typical capacitance vs. Source-Drain Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
Datasheet pdf - http://www.DataSheet4U.net/
SP8K22
Transistor
zMeasurement circuits
Pulse Width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10%
RG VDD
td(on) ton 90% tr td(off) toff 90% tr
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
VG
VGS ID.