N-Channel Enhancement Mode MosFET
SSE90P06-08P
Elektronische Bauelemente -90A , -60V , RDS(ON) 12mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Prod...
Description
SSE90P06-08P
Elektronische Bauelemente -90A , -60V , RDS(ON) 12mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
D
C
TO-220P
B
R
T
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology.
G
E
A
S
F
H
I
J
K
L
U
X
M
P
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
P-Channel D2
www.DataSheet.co.kr
N
O
V
Q
Q
W
1 2 3
REF. A B C D E F G H I J K L Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60
G1 S3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TC=25°C ID IDM IS TC=25°C PD TJ, TSTG
Ratings
-60 ±20 -90 -390 -110 300 -55~175
Unit
V V A A A W °C
Continuous Source Current (Diode Conduction) Power Diss...
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