SSE75N03

SSE75N03 Elektronische Bauelemente 75 A, 25 V, RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES z z z Low Gate Charge Simple Drive Requirement Fast Switching PACKAGE DIMENSIONS REF. A b c D E www.DataSheet.co.kr Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4.80 1.00 0.50 9.00 10.4 15.3 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.17 13.25 2.60 3.71 2.60 1.45 1.47 14.25 2.89 3.96 2.80 2.54 REF. L4 L5 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current,VGS@ 4.5V Drain Current,VGS@ 4.5V Pulsed Drain Current Linear Derating Factor Single Pulse Avalanche Energy 2 Symbol VDS VGS ID @Ta=25℃ ID @Ta=100℃ IDM PD @Tc=25℃ EAS IAS Tj, Tstg Ratings 25 ±20 75 62.5 350 96 0.76 400 40 -55 ~ +150 Unit V V A A A W W/°C mJ A °C 1 Total Power Dissipation Single Pulse Avalanche Current Operating Junction and Storage Temperature Range THERMAL DATA Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rθj-case Rθj-amb Value 1.3 62 Unit °C/W °C/W 01-June-2005 Rev. A Page 1 of 4 Datasheet pdf - http://www.DataSheet4U.net/ SSE75N03...