2SC4002

Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 5.0 0.45 0.5 0.45 0.6 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 1.3 1.3 Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage fT VCE=30V, IC=10mA VCE(sat) IC=50mA, IB=5mA Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA * : The 2SC4002 is classified by 50mA hFE as follows : 60 D 120 100 E 200 2.0 14.0 0.44 1 : Emitter 2 : Collector 3 : Base SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Ratings Unit 400 V 400 V 5V 200 mA 400 mA 600 mW 150 ˚C –55 to +150 ˚C Ratings min typ 60* 70 max 0.1 0.1 200* 0.6 1.0 Unit µA µA MHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircr...