N-Channel Enhancement Mode MosFET
SSE90N08-08
Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product...
Description
SSE90N08-08
Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
TO-220P
FEATURES
Low RDS(on) trench technology. Low thermal impedance Fast Switch Speed.
E
G
D
C
B
R
T
A
S
APPLICATIONS
White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
H
F
J
K
L
I
U
X
M
P
N
O
V
Q
Q
W
1 2 3
N-Channel D2
REF. A B C D E F G H I J K L
G1 S3
www.DataSheet.co.kr
Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37
REF. M N O P Q R S T U V W X
Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA=25°C ID IDM IS TA=25°C PD TJ, TSTG
Ratings
80 ±20 90 350 120 300 -55~175
Unit
V V A A A W °C
Continuous Source Current (Diode Conduction) Power Dissipation
1
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
1
t≦10sec RθJA Steady State
62.5 °C / W 0.5
Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Dec-2011 Rev. A
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