Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
For high breakdow...
Power
Transistors
2SC4004
Silicon
NPN triple diffusion planar type
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
For high breakdown voltage high-speed switching ■ Features
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
High-speed switching
High collector-base voltage (Emitter open) VCBO
φ 3.1±0.1
Wide safe operation area Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw
1.4±0.1
1.3±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+–00..12
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
900
V
c type Collector-emitter voltage (E-B short) VCES
900
V
n d tage. ued Collector-emitter voltage (Base open) VCEO
800
V
le s ontin Emitter-base voltage (Collector open) VEBO
7
V
a elifecyc disc Base current
IB
0.3
A
n u t ed, Collector current
IC
1
A
roduc d typ Peak collector current
ICP
2
A
te tin ur P tinue Collector power dissipation
PC
30
W
fo on Ta = 25°C
2.0
wing disc Junction temperature
Tj
150
°C
in n follo ned Storage temperature
Tstg −55 to +150 °C
a o includestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C
c tinued ance Parameter
Symbol
Conditions
M is con inten Collector-emitter voltage (Base open)
/Dis ma Collector-base cutoff current (Emitter open)
D ance type, Emitter-base cutoff current (Collector open)
ten ce Forward current transfer ratio Mainaintenan Collector-emitter satu...