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2SC4024 Dataheets PDF



Part Number 2SC4024
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SC4024 Datasheet2SC4024 Datasheet (PDF)

2SC4024 High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 100 V VCEO 50 V VEBO 15 V IC 10 A IB 3 A PC 35(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB=100V VEB=15V IC=25mA VCE=4V, IC=1A IC=5A, IB=0.1A VCE=12V, IE=–0.5A VCB=10V, .

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2SC4024 High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 100 V VCEO 50 V VEBO 15 V IC 10 A IB 3 A PC 35(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB=100V VEB=15V IC=25mA VCE=4V, IC=1A IC=5A, IB=0.1A VCE=12V, IE=–0.5A VCB=10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC IB1 IB2 (V) (Ω) (A) (A) (A) 20 4 5 0.1 –0.1 ton (µs) 0.5typ (Ta=25°C) Ratings Unit 10max µA 10max µA 50min V 300 to 1600 0.5max 24typ 150typ V MHz pF tstg (µs) 2.0typ tf (µs) 0.5typ External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) I C– V CE Characteristics (Typical) 10 IB=35mA 8 30mA 25mA 20mA 6 15mA 4 10mA 5mA 2 0 0 2 4 6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 1.5 1.0 0.5 IC=1A 5A 3A 0 0.002 0.01 0.1 Base Current IB(A) 10A 12 Collector Current IC(A) I C– V BE Temperature Characteristics (Typical) (VCE=4V) 10 8 6 –302˚152C˚5(˚CC(Ca(CsaCesaseTeeTTemepm)mp)p) 4 2 0 0 0.5 1.0 1.2 Base-Emittor Voltage VBE(V) DC Current Gain hFE Transient Thermal Resistance θ j-a( ˚ C / W ) h FE– I C Characteristics (Typical) 1000 (VCE=4V) Typ 500 h FE– I C Temperature Characteristics (Typical) 1000 (VCE=4V) 125˚C 500 25˚C –30˚C θ j-a– t Characteristics 4 1 DC Current Gain hFE 100 0.02 0.1 0.5 1 Collector Current IC(A) 5 10 100 0.02 0.1 0.5 1 Collector Current IC(A) 0.5 0.3 5 10 1 10 100 Time t(ms) 1000 Cut-off Frequency fT(MHZ) f T– I E Characteristics (Typical) (VCE=12V) 30 Typ 20 Safe Operating Area (Single Pulse) 30 1ms 10 100 10ms ms 5 DC Collector Current IC(A) 10 0 –0.05 –0.1 –0.5 –1 Emitter Current IE(A) –5 –10 1 Without Heatsink 0.5 Natural Cooling 0.2 3 5 10 50 100 Collector-Emitter Voltage VCE(V) Maximum Power Dissipation PC(W) Pc–Ta Derating 40 30 Natural Cooling Silicone Grease Heatsink: Aluminum in mm heatsink Infinite ith W 20 150x150x2 100x100x2 10 50x50x2 Without Heatsink 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 85 .


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