IXSH40N60. 40N60 Datasheet

40N60 IXSH40N60. Datasheet pdf. Equivalent

Part 40N60
Description IXSH40N60
Feature VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75.
Manufacture IXYS Corporation
Datasheet
Download 40N60 Datasheet



40N60
Low V IGBT
CE(sat)
High Speed IGBT
IXSH/IXSM 40 N60
IXSH/IXSM 40 N60A
VCES
600 V
600 V
IC25
75 A
75 A
VCE(sat)
2.5 V
3.0 V
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXSH)
V
CES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
T
C
= 90°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, L = 30 µH
t
SC
(SCSOA)
PC
T
J
TJM
Tstg
M
d
Weight
V=
GE
15
V,
V
CE
=
360
V,
T
J
=
125°C
RG = 22 Ω, non repetitive
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
600
±20
±30
75
40
150
ICM = 80
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
µs
300www.DataSheet.co.kr
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6g
300 °C
Symbol
BV
CES
VGE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
250
µA,
V
GE
=
0
V
IC = 4 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V=
GE
±20
V
I = I , V = 15 V
C C90 GE
TJ = 25°C
TJ = 125°C
40N60
40N60A
600
4
V
7V
50 µA
1 mA
±100 nA
2.5 V
3.0 V
G
C
E
TO-204 AE (IXSM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
q International standard packages
q Guaranteed Short Circuit SOA
capability
q Low V
CE(sat)
- for low on-state conduction losses
q High current handling capability
q MOS Gate turn-on
- drive simplicity
q Fast Fall Time for switching speeds
up to 20 kHz
Applications
q AC motor speed control
q Uninterruptible power supplies (UPS)
q Welding
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q High power density
© IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
91546F (4/96)
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
Datasheet pdf - http://www.DataSheet4U.net/



40N60
IXSH 40N60 IXSM 40N60
IXSH 40N60A IXSM 40N60A
Symbol
gfs
IC(on)
Cies
C
oes
Cres
Qg
Qge
Qgc
td(on)
t
ri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
t
fi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VGE = 15 V, VCE = 10 V
V = 25 V, V = 0 V, f = 1 MHz
CE GE
16 23
200
4500
350
90
S
A
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
190 260 nC
45 60 nC
88 120 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 2.7
55 ns
170 ns
400 ns
Switching times may
40N60
400 ns
increase for VCE (Clamp)
40N60A
200
ns
> 0.8 • VCES, higher TJ or
increased RG
40N60
40N60A
5.0
2.5
mJ
mJ
Inductive load, TJ =
125°C
I = I , V = 15 V,
C C90 GE
L = 100 µH
V = 0.8 V ,
CE CES
RG = 2.7
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher T or increased R
JG
40N60
40N60A
40N60
40N60A
www.DataSheet.co.kr
55 ns
170 ns
1.7 mJ
1000 ns
340 525 ns
600 1500 ns
340 700 ns
40N60
40N60A
12 mJ
6 mJ
0.42 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Datasheet pdf - http://www.DataSheet4U.net/





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