40N60

VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 www.DataSheet.co.kr TO-247 AD (IXSH) V V V V A A A A µs C G C E TO-204 AE (IXSM) 300 W °C °C °C -55 ... +150 150 -55 ... +150 Mounting torque G = Gate, E = Emitter, C = Collector, TAB = Collector 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 50 1 ±100 40N60 40N60A 2.5 3.0 V V µA mA nA V V Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 250 µA, VGE = 0 V = 4 mA, VCE = VGE V CE = 0.8 VCES V GE = 0 V V CE = 0 V, VGE = ...