OC1005 FET Datasheet

OC1005 Datasheet, PDF, Equivalent


Part Number

OC1005

Description

N-channel TrenchMOS standard level FET

Manufacture

NXP Semiconductors

Total Page 12 Pages
Datasheet
Download OC1005 Datasheet


OC1005
OC1005
N-channel TrenchMOS standard level FET
Rev. 02 — 10 December 2007
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Standard level threshold
I Very low on-state resistance
1.3 Applications
I Motors, lamps, solenoids
I DC-to-DC converters
I Uninterrupted power supplies
I General industrial applications.
1.4 Quick reference data
I VDS 55 V
I Ptot 200 W
2. Pinning information
I ID 110 A
I RDSon 7.1 m
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Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base;
connected to drain
Simplified outline Symbol
mb D
G
mbb076 S
123
SOT78 (TO-220AB)
Datasheet pdf - http://www.DataSheet4U.net/

OC1005
NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
OC1005
SC-46
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT78
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
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IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A;
tp = 0.1 ms; VDS 55 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min
-
-
-
[1] -
-
-
-
55
55
[1] -
-
-
Max
55
55
±20
110
80
390
200
+175
+175
110
390
280
[1] Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A.
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
2 of 12
Datasheet pdf - http://www.DataSheet4U.net/


Features OC1005 N-channel TrenchMOS standard leve l FET Rev. 02 — 10 December 2007 Prod uct data sheet 1. Product profile 1.1 General description Standard level N-c hannel enhancement mode Field-Effect Tr ansistor (FET) in a plastic package usi ng TrenchMOS technology. 1.2 Features I Standard level threshold I Very low o n-state resistance 1.3 Applications I Motors, lamps, solenoids I DC-to-DC con verters I Uninterrupted power supplies I General industrial applications. 1.4 Quick reference data I VDS ≤ 55 V I Ptot ≤ 200 W www.DataSheet.co.kr I I D ≤ 110 A I RDSon ≤ 7.1 mΩ 2. Pi nning information Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain mb D Simplified outline Symbo l G mbb076 S 1 2 3 SOT78 (TO-220AB) Datasheet pdf - http://www.DataSheet4 U.net/ NXP Semiconductors OC1005 N-ch annel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Package Name OC1005 SC-46 Description plastic single-ended package;.
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