Document
OC1005
N-channel TrenchMOS standard level FET
Rev. 02 — 10 December 2007 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Standard level threshold I Very low on-state resistance
1.3 Applications
I Motors, lamps, solenoids I DC-to-DC converters I Uninterrupted power supplies I General industrial applications.
1.4 Quick reference data
I VDS ≤ 55 V I Ptot ≤ 200 W
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I ID ≤ 110 A I RDSon ≤ 7.1 mΩ
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
mb
D
Simplified outline
Symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information Package Name OC1005 SC-46 Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature
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Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1
[1]
Min −55 −55
Max 55 55 ±20 110 80 390 200 +175 +175 110 390 280
Unit V V V A A A W °C °C A A mJ
Source-drain diode source current peak source current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDS ≤ 55 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C
[1]
-
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
[1]
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A.
OC1005_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2007
2 of 12
Datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
120 Pder (%) 80
003aab844
120 Ider (%) 100
001aah320
80
package limiting current 75 A
60
40
40
20
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 Tmb (°C) 200
P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature
103 Limit RDSon = VDS/ID ID (A) 102
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ID I der = ------------------- × 100 % I D ( 25 ° C ) Fig 2. Normalized continuous drain current as a function of mounting base temperature
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tp = 10 µs
100 µs DC 10 1 ms 10 ms
1 1 10 VDS (V)
102
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
OC1005_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2007
3 of 12
Datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Rth(j-mb) Rth(j-a) Thermal characteristics Conditions vertical in free air Min Typ 60 Max 0.75 Unit K/W K/W thermal resistance from junction to mounting base see Figure 4 thermal resistance from junction to ambient Symbol Parameter
1
003aab893
Zth(j-mb) (K/W)
δ = 0.5 0.2
10−1
0.1 0.01 0.02 single pulse
P δ= tp T
tp
t T
10−2
10−4
10−3
10−2
10−1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
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OC1005_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2007
4 of 12
Datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain leakage current VDS = 55 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; see Figure 6 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; see Figure 13 IS = 20 A; dIS/dt.