Document
OC1005
N-channel TrenchMOS standard level FET
Rev. 02 — 10 December 2007 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Standard level threshold I Very low on-state resistance
1.3 Applications
I Motors, lamps, solenoids I DC-to-DC converters I Uninterrupted power supplies I General industrial applications.
1.4 Quick reference data
I VDS ≤ 55 V I Ptot ≤ 200 W
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I ID ≤ 110 A I RDSon ≤ 7.1 mΩ
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
mb
D
Simplified outline
Symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information Package Name OC1005 SC-46 Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature
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Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1
[1]
Min −55 −55
Max 55 55 ±20 110 80 390 200 +175 +175 110 390 280
Unit V V V A A A W °C °C A A mJ
Source-drain diode source current peak source current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDS ≤ 55 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C
[1]
-
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
[1]
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A.
OC1005_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2007
2 of 12
Datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
120 Pder (%) 80
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120 Ider (%) 100
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80
package limiting current 75 A
60
40
40
20
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 Tmb (°C) 200
P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature
103 Limit RDSon = VDS/ID ID (A) 102
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ID I der = ------------------- × 100 % I D ( 25 ° C ) Fig 2. Normalized continuous drain current as a function of mounting base temperature
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tp = 10 µs
100 µs DC 10 1 ms 10 ms
1 1 10 VDS (V)
102
Tmb = 25 °C; IDM is single pulse; VGS .