2SC4031

Ordering number:EN2478B NPN Triple Diffused Planar Silicon Transistor 2SC4031 900V/20mA Switching Applications Features · High breakdown voltage (VCEO min=900V). · Small Output Capacitance (Cob typ=1.6pF). · Wide ASO (adoption of MBIT process). · High reliability (adoption of HVP process). Package Dimensions unit:mm 2049C [2SC4031] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=900V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=10V, IC=1mA IC=2mA, IB=400µA IC=2mA, IB=400µA 9.4 0.8 123 2.55 2.55 2.7 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220MF Ratings 2000 900 5 20 60 1.65 1.2 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ 20 50 6 max 1 1 120 5 2 Unit µA µA MHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s c...