1N5550US

1N5550US THRU 1N5554US Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V Features Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, and JANTXV versions. Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Average Forward Current @ 55 °C in free air, lead length 0.375" Repetitive Surge Current @ 55 °C in free air, lead length 0.375" Non-Repetitive Surge Current (tp = 8.3mS @ VR & TJMAX) (tp = 8.3mS, @ VR & 25 °C) Storage Temperature Range VRWM IF(AV) 1N 5550U S 1N 5551U S 1N 5552U S 1N 5553U S 1N 5554U S Units V A 200 400 600 5.0 800 1000 www.DataSheet.co.kr IFRM 25 A IFSM TSTG 100 150 -65 to +175 A °C Revision: August 22nd, 2011 1 www.semtech.com Datasheet pdf - http://www.DataSheet4U.net/ 1N5550US THRU 1N5554US POWER DISCRETES Electrical Specifications Symbol 1N5550US 1N5551US 1N5552US Average Forward Current (sine wave) - max. TA = 55 °C - max. L = 3/8"; TL = 55 °C I2t for fusing (t = 8.3mS) max Forward Voltage Drop max. @ IF = 3.0A, Tj= 25 °C Reverse Current max. @ VRWM, Tj = 25°C @ VRWM, Tj = 125°C Reverse Recovery Time max. 0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC) Junct...