2SC4073

2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4073 500 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=–0.3A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 30typ (Ta=25°C) 2SC4073 Unit µA V V V MHz pF 13.0min 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.2 IB2 (A) –0.4 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 2.54 3.9 B C E I C – V CE Characteristics (Typical) 5 m 60 0m A 400 mA V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) I C – V BE Temperature Characteristics (Typical) (V C E =4V) 5 A Collector Current I C (A) 300m A 3 Collector Current I C (A) 4 IB =8 00 2 4 200mA 3 V B E (sat) 1 –55˚C (Case Temp) p) 25˚C (Case Tem e Temp) as (C 5˚C 12 12 5˚ Tem emp se T (Ca se as ˚C V C E (s...