2SC4080

Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features · High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent high-frequency characteristic. · Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)150V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)60mA VCE=(–)30V, IC=(–)30mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)100µA, IC=0 * : The 2SA1575/2SC4080 are classifie...