2SC4095

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. excellent associated gain and very wide dynamic range. This allows 2.9±0.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 −0.05 0.4 −0.05 0.4 0.16 −0.06 +0.1 2.8 −0.3 +0.2 1.5 −0.1 2 3 4 5° 0 to 0.1 5° +0.2 +0.1 +0.1 NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
S21e
2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA 1.1−0.1 0.8 +0.2 0.6 −0.05 +0.1 5° ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure VCBO VCEO VEBO IC PT Tj Tstg SYMBOL ICBO IEBO hFE fT Cre 50 20 10 1.5 35 200 150 V V V mA mW 5° 65 to +150 MIN. TYP. C C MAX. 1.0 1.0 UNIT PIN CONNECTIONS 1. Collector 2. Emitter 3. Base...