2SC4130

2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4130 500 400 10 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 2SC4130 100max 100max 400min 10 to 30 0.5max 1.3max 15typ 50typ Unit µA V V V MHz pF 13.0min 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 67 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (µs) 1max tstg (µs) 2.2max tf (µs) 0.5max 2.54 3.9 B C E I C – V CE Characteristics (Typical) 7 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) IB =1 6 40 0m 10 00 m A A 60 0m A 400mA 2 Collector Current I C (A) 6 Collector Current I C (A) 4 4 mp) e Te (Cas –55˚C ) mp se Te 5˚C 200 mA em 50mA p) ˚C V C E (sat) 0 0.02 0.05 0.1 0.5 (C 125˚C as e T –5 5˚ C ...