2SC4132

Transistors 2SC4132 / 2SD1857 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage VCBO 120 Collector-emitter voltage VCEO 120 Emitter-base voltage VEBO 5 Collector current IC 2 ICP 3 Collector power dissipation 2SC4132 2SD1857 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 *1 Single pulse Pw = 10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board. zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) * Denotes hFE 2SC4132 2SD1857 MPT3 ATV PQR CB* T100 PQR − TV2 1000 2500 zExternal dimensions (Unit : mm) Unit V V V A A *1 *2 W °C °C 2SC4132 ROHM : MPT3 EIAJ : SC-62 4.0 1.0 2.5 0.5 (1) (2) (3) 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 2SD1857 6.8 2.5 1.0 0.9 14.5 4.4 0.65Max. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transiti...