2SC4139
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maxim...
2SC4139
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=–1.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ
(Ta=25°C) 2SC4139 Unit
µA µA
V V MHz pF
20.0min 19.9±0.3
4.0
a b
ø3.2±0.1
4.0max
V
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.8 IB2 (A) –1.6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
15
1. 5A
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 1.5
I C – V BE Temperature Characteristics (Typical)
10 (V C E =4V)
1 .2 A
800 mA
Collector Current I C (A)
600mA
8 V B E (sat) 1.0
–55˚C (Cas
ase 25˚C (C
125˚C
10
e Temp)
Temp)
Temp )
em p) ˚C
eT
Collector Current I C (A)
6
mp)
...