Document
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www.DataSheet.co.kr
WFP3205
Silicon N-Channel MOSFET
Features
■ 110A,50V, RDS(on)(Max 8mΩ)@VGS=10V ■ Ultra-low Gate charge(Typical133nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note1) (Note3) (Note1)
Parameter
Value
50 110 80 390 ±20 20 5.0 200 1.3 -55~150 300
Units
V A A A V mJ V/ ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient
Value Min
-
Typ
0.5 -
Max
0.75 62
Units
℃/W ℃/W ℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFP3205
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=60A (Note4,5) 35 54 tf toff RG=4.5Ω VGS=10V VDS=44V, 133 146 (Note4,5) 65 50 -
Symbol
IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton
Test Condition
VGS = ±30 V, VDS = 0 V
Min
±30 50 2 44 -
Type
0.057 3247 211 781 101 14
Max
±100
Unit
nA V µA V V/℃ V mΩ S
IG=±10 µA,VDS=0V VDS=50V,V GS=0V ID=250 µA,VGS=0V ID=1mA, Referenced to 25℃ VDS=VGS,ID=250 µA VGS=10V,ID=60A VDS=25V,ID=60A VDS=25V, VGS=0V, f=1MHz VDD=28V, ID=60A
10 4 8.0 -
pF
ns
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge
Symbol
IDR IDRP VDSF trr Qrr
Test Condition
IDR=60A,VGS=0V IDR=60A,VGS=0V, dIDR / dt =100 A / µs
Min
-
Type
69 143
Max
110 390 1.4 104 215
Unit
A A V ns µC
Note 1.Repeativity rating :pulse width limited by junction te.