DatasheetsPDF.com

WFP3205 Dataheets PDF



Part Number WFP3205
Manufacturers Winsemi
Logo Winsemi
Description Silicon N-Channel MOSFET
Datasheet WFP3205 DatasheetWFP3205 Datasheet (PDF)

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFP3205 Silicon N-Channel MOSFET Features ■ 110A,50V, RDS(on)(Max 8mΩ)@VGS=10V ■ Ultra-low Gate charge(Typical133nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with super.

  WFP3205   WFP3205



Document
Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFP3205 Silicon N-Channel MOSFET Features ■ 110A,50V, RDS(on)(Max 8mΩ)@VGS=10V ■ Ultra-low Gate charge(Typical133nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note1) (Note3) (Note1) Parameter Value 50 110 80 390 ±20 20 5.0 200 1.3 -55~150 300 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.75 62 Units ℃/W ℃/W ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFP3205 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=60A (Note4,5) 35 54 tf toff RG=4.5Ω VGS=10V VDS=44V, 133 146 (Note4,5) 65 50 - Symbol IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS = ±30 V, VDS = 0 V Min ±30 50 2 44 - Type 0.057 3247 211 781 101 14 Max ±100 Unit nA V µA V V/℃ V mΩ S IG=±10 µA,VDS=0V VDS=50V,V GS=0V ID=250 µA,VGS=0V ID=1mA, Referenced to 25℃ VDS=VGS,ID=250 µA VGS=10V,ID=60A VDS=25V,ID=60A VDS=25V, VGS=0V, f=1MHz VDD=28V, ID=60A 10 4 8.0 - pF ns Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=60A,VGS=0V IDR=60A,VGS=0V, dIDR / dt =100 A / µs Min - Type 69 143 Max 110 390 1.4 104 215 Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction te.


EHP-B05 WFP3205 WFP3205T


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)