5HB03N8

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementary enhance enhancem Summary vice De Dev V(BR)D SS (BR)DS QG RDS(on) 25mΩ @ VGS= 10V N-CH 30V 9.0nC 45mΩ @ VGS= 4.5V 50m Ω @ VGS= -10V P-CH -30V 12.7nC 75mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information vice De Dev 5HB03N8 Reel size es) (inch (inche 13 Tape width (mm) 12 nti ty Qua Quan tit per reel 2,500 Device marking WFS 5HB03N8 Issue 1.0 - April 2010 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25 °C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nnel chan chann 30 ±20 4.98 3.98 3.98 4.17 Pnel chan chann -30 ±20 -4.13 -3.31 -3.36 -3.51 -19.6 -2.0 -19.6 Unit V V A IDM IS ISM PD PD PD Tj, Tstg 22.9 2.0 22.9 0.87 6.94 1.35 10.9 0.95 7.63 A A A W mW/°C W mW/°C Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C Power dissipati...