WFU1N60

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 1N60 WFU WFU1 Silicon N-Channel MOSFET Features � � � � � 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note2) (Note1) (Note3) (Note1) Parameter Value 600 1.3 0.84 5.0 ±30 78 3.9 5.5 32 0.24 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min 0.5 - Typ - Max 3.9 110 Units ℃/W ℃/W ℃/W Rev.A Dec.2010 Copyright@Wi...