Silicon N-Channel MOSFET
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
B WFU2N60 WFU2N60B
Silicon N-Channel MOSFET
Features
�...
Description
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
B WFU2N60 WFU2N60B
Silicon N-Channel MOSFET
Features
� � � � � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1)
Parameter
Value
600 2.0 1.3 8 ±30 140 6.4 5.5 46 0.35 -55~150 300
Units
V A A A V mJ mJ V/ ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient
Value Min
0.5 -
Typ
-
Max
2.7 62.5
Units
℃/W ℃/W ℃/W
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Datasheet pdf - http://www.D...
Similar Datasheet