WFU5N50

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 0 WFU5N5 5N50 con N-Channel MOSFET Sili lic Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃ ) General Description Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugge d avalanche chara ct er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. IPAK Absolute Maximum Ratings Symbol V DSS ID Continuous Drain Current(@Tc=100 ℃) IDM V GS E AS E AR dv/dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0.49 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25 ℃ ) (Note 2) (Note 1) (Note 3) (Note1) 2.9 18 ±30 300 7.5 4.5 61 A A V mJ mJ V/ns W Drain Source Voltage Continuous Drain Current(@Tc=25 ℃) Param ete r ter Val ue alue 500 5 U n i ts V A Channel Temperature Thermal Characteristics ue Val alue Symb ol R QJC R QCS R QJA er Para m et ete Min Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Amb...