WFW13N50

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 13N5 0 WFW FW13N5 13N50 con N-Ch annel MOS FET Sili lic Cha OSF Features ■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature 1.56 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) (Note2) (Note1) (Note3) (Note1) 8 52 ±30 845 5 3.5 218 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 500 13 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.58 62.5 Units...