Silicon N-Channel MOSFET
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WFW18N50W
Silicon N-Channel MOSFET
Features
■ 18A,500V...
Description
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFW18N50W
Silicon N-Channel MOSFET
Features
■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1)
Parameter
Value
500 18 12.7 80 ±30 330 27.7 4.5 280 -55~150 300
Units
V A A A V mJ mJ V/ ns W ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient
Value Min
-
Typ
0.24 -
Max
0.45 40
Units
℃/W ℃/W ℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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