WFP70N06T

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr N06T WFP70 P70N Silicon N-Channel MOSFET Features � � � � � 68A,60V, RDS(on)(Max18mΩ)@VGS=10V Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TJ,Tstg TL 1/8 form Case for 5 seconds Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum Lead Temperature for soldering purpose, 300 (Note2) (Note3) (Note1) Parameter Value 60 68 51 280 ±25 800 7.0 115 0.77 -55~175 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 1.3 62.5 Units ℃/W ℃/W ℃/W Rev.A Oct.2010 Copyright@Winsemi Microelectronics Co., Ltd...