FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure ha...
FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar
Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
Features
High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
G
TO-264
G C E
www.DataSheet.co.kr
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TC = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
@ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C
FGL60N100D 1000 ± 25 60 42 120 15 176 70 -55 to +150 -55 to +150 300
Units V V A A A A W W °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.71 2.08 25 Units °C/W °C/W °C/W
©2002 Fairchild Semiconductor Corporation...