RMW200N03

Data Sheet 4.5V Drive Nch MOSFET RMW200N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) PSOP8 0.5 5.0 6.0 (8) (7) (6) (5) Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive). 0~0.1 0.5 1pin mark (1) (2) (3) (4) 0.4 0.22 0.9 1.27 5.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RMW200N03 Type Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD Symbol VDSS VGSS Limits 30 20 20 www.DataSheet.co.kr Unit V V A A A A W C C (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗2 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 80 2.5 80 3.0 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * MOUNTED ON 40mm×40mm Cu BOARD Symbol Rth (ch-a)* Limits 41.7 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ RMW200N03  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source o...