RJK1008DPN

RJK1008DPN N-Channel Power MOSFET High-Speed Switching Use REJ03G1627-0100 Rev.1.00 Mar 21, 2008 Features VDSS : 100 V RDS(on) : 11 mΩ (Max) ID : 80 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1G 1. Gate 2. Drain 3. Source 4. Drain S 3 1 2 3 www.DataSheet.co.kr Application Motor control, Lighting control, Solenoid control, DC-DC converter, etc. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25°C 2. STch = 25°C, Tch ≤ 150°C, L = 100 µH Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP Note2 Pch Note1 θch-c Tch Tstg Ratings 100 ±20 80 160 80 160 40 125 1.0 150 –55 to +150 Unit V V A A A A A W °C/W °C °C REJ03G1627-0100 Rev.1.00 Mar 21, 2008 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1008DPN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse r...