RJK1028DSP

Preliminary Datasheet RJK1028DSP Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 125 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      R07DS0197EJ0200 Rev.2.00 Nov 08, 2010 Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 4 G 5 6 7 8 D D D D 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 12 www.DataSheet.co.kr S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Note 2 IAP EAR Note 2 Pch Note3 ch-a Note3 Tch Tstg Ratings 100 +12, -5 3 12 3 2 0.4 1.8 70 150 –55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s R07DS0197EJ0200 Rev.2.00 Nov 08, 2010 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1028DSP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capa...