RJK1051DPB

Preliminary Datasheet RJK1051DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0082EJ0102 (Previous: REJ03G1768-0101) Rev.1.02 Jul 30, 2010  Low on-resistance RDS(on) = 30 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Application  Switching Mode Power Supply www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 100 20 15 60 15 7.5 5.6 45 2.78 150 –55 to +150 Unit V V A A A A mJ W C/W C C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved. R07DS0082EJ0102 Rev.1.02 Jul 30, 2010 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1051DPB Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown...