Document
Preliminary Datasheet
RJK1211DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free R07DS0090EJ0300 Rev.3.00 Feb 01, 2012
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
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S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 120 +12, –5 5 15 5 3 0.77 10 12.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C
R07DS0090EJ0300 Rev.3.00 Feb 01, 2012
Page 1 of 6
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RJK1211DNS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 120 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 100 110 9.0 1070 80 35 1.7 8.0 3.0 2.0 7.8 2.8 38 2.7 0.83 40 Max — ± 0.1 10 2.5 130 150 — — — — — — — — — — — — 1.1 — Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +12, -5 V, VDS = 0 VDS = 120 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 2.5 A, VGS = 10 V Note4 ID = 2.5 A, VGS = 4.5 V Note4 ID = 2.5 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 4.5 V ID = 5 A VGS = 10 V, ID = 2.5 A VDD 30 V RL = 12 Rg = 4.7 IF = 5 A, VGS = 0 Note4 IF =5 A, VGS = 0 diF/ dt = 100 A/ s
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R07DS0090EJ0300 Rev.3.00 Feb 01, 2012
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RJK1211DNS
Preliminary
Main Characteristics
Power vs.Temperature Derating
12
Maximum Safe Operation Area
100
Channel Dissipation Pch (W)
Drain Current ID (A)
10 8 6 4 2
10
1 m s
10
10
0
μs
μs
D C pe O
1
ra tio n
PW = 10 ms
Operation in this area is limited by 0.1 R DS(on) Tc = 25°C 1 shot pulse
0
50
100
150
200
0.01 0.1
1
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20
20
Typical Transfer Characteristics
VDS = 5 V Pulse Test 16 Tc = 25°C
10 V
3.4 V 4.5 V
Pulse Test Tc = 25°C
Drain Current ID (A)
3.2 V
Drain Current ID (A)
16
12
12
8
3.0 V
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8
4
VGS = 2.8 V
4
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Pulse Test
0.8
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) (mΩ)
1000 Pulse Test
Drain to Source Saturation Voltage VDS(on) (V)
1.0
0.6
ID = 5 A
VGS = 4.5 V 100
10 V
0.4 3A 0.2 1A 0 2 4 6 8 10 12
10 1 10 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0090EJ0300 Rev.3.00 Feb 01, 2012
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Datasheet pdf - http://www.DataSheet4U.net/
RJK1211DNS
Static Drain to Source on State Resistance vs. Temperature (Typical)
500 10000 Pulse Test ID = 2.5 A
Preliminary
Typical Capacitance vs. Drain to Source Voltage (Typical)
Static Drain to Source on State Resistance RDS(on) (mΩ)
Capacitance C (pF)
400
1000
Ciss
300 VGS = 4.5 V
100 Coss 10 VGS = 0 f = 1 MHz 1 0.1 1 10 100 1000
200
100
10 V
Crss
0 −25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
Dynamic Input Characteristics (Typical)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
80
Reverse Drain Current IDR (A)
ID = 5 A Ta = 25 °C VDD = 50 V VDS 25 V 10 V VGS
16
10
60
12
8
VGS = 0 V Pulse Test Ta = 25 °C
6
40
8
4 2
20
VDD = 50 V 25 V 10 V
4
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0 16 20
0
4
8
12
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
1.0 IAP = 3 A VDD = 50 V duty < 0.1% Rg ≥ 50 Ω
0.8
0.6
0.4
0.2 0 25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0090EJ0300 Rev.3.0.