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RJK1211DNS Dataheets PDF



Part Number RJK1211DNS
Manufacturers Renesas
Logo Renesas
Description N-Channel Power MOSFET
Datasheet RJK1211DNS DatasheetRJK1211DNS Datasheet (PDF)

Preliminary Datasheet RJK1211DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      R07DS0090EJ0300 Rev.3.00 Feb 01, 2012 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain www.DataSheet.co.kr S S S 1 2 3 Absolute Ma.

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Preliminary Datasheet RJK1211DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      R07DS0090EJ0300 Rev.3.00 Feb 01, 2012 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain www.DataSheet.co.kr S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 120 +12, –5 5 15 5 3 0.77 10 12.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C R07DS0090EJ0300 Rev.3.00 Feb 01, 2012 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1211DNS Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 120 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 100 110 9.0 1070 80 35 1.7 8.0 3.0 2.0 7.8 2.8 38 2.7 0.83 40 Max — ± 0.1 10 2.5 130 150 — — — — — — — — — — — — 1.1 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +12, -5 V, VDS = 0 VDS = 120 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 2.5 A, VGS = 10 V Note4 ID = 2.5 A, VGS = 4.5 V Note4 ID = 2.5 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 4.5 V ID = 5 A VGS = 10 V, ID = 2.5 A VDD  30 V RL = 12  Rg = 4.7  IF = 5 A, VGS = 0 Note4 IF =5 A, VGS = 0 diF/ dt = 100 A/ s www.DataSheet.co.kr R07DS0090EJ0300 Rev.3.00 Feb 01, 2012 Page 2 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1211DNS Preliminary Main Characteristics Power vs.Temperature Derating 12 Maximum Safe Operation Area 100 Channel Dissipation Pch (W) Drain Current ID (A) 10 8 6 4 2 10 1 m s 10 10 0 μs μs D C pe O 1 ra tio n PW = 10 ms Operation in this area is limited by 0.1 R DS(on) Tc = 25°C 1 shot pulse 0 50 100 150 200 0.01 0.1 1 10 100 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 20 Typical Transfer Characteristics VDS = 5 V Pulse Test 16 Tc = 25°C 10 V 3.4 V 4.5 V Pulse Test Tc = 25°C Drain Current ID (A) 3.2 V Drain Current ID (A) 16 12 12 8 3.0 V www.DataSheet.co.kr 8 4 VGS = 2.8 V 4 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (mΩ) 1000 Pulse Test Drain to Source Saturation Voltage VDS(on) (V) 1.0 0.6 ID = 5 A VGS = 4.5 V 100 10 V 0.4 3A 0.2 1A 0 2 4 6 8 10 12 10 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS0090EJ0300 Rev.3.00 Feb 01, 2012 Page 3 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1211DNS Static Drain to Source on State Resistance vs. Temperature (Typical) 500 10000 Pulse Test ID = 2.5 A Preliminary Typical Capacitance vs. Drain to Source Voltage (Typical) Static Drain to Source on State Resistance RDS(on) (mΩ) Capacitance C (pF) 400 1000 Ciss 300 VGS = 4.5 V 100 Coss 10 VGS = 0 f = 1 MHz 1 0.1 1 10 100 1000 200 100 10 V Crss 0 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Dynamic Input Characteristics (Typical) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 80 Reverse Drain Current IDR (A) ID = 5 A Ta = 25 °C VDD = 50 V VDS 25 V 10 V VGS 16 10 60 12 8 VGS = 0 V Pulse Test Ta = 25 °C 6 40 8 4 2 20 VDD = 50 V 25 V 10 V 4 www.DataSheet.co.kr 0 16 20 0 4 8 12 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 1.0 IAP = 3 A VDD = 50 V duty < 0.1% Rg ≥ 50 Ω 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0090EJ0300 Rev.3.0.


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