2SC4187

DATA SHEET SILICON TRANSISTOR 2SC4187 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4187 is designed primarily for use in low voltage and low current application up to UHF band. The 2SC4187 is ideal for pagers, electro-optic detector postamplifier applications, and other battery powered systems. Super mini mold package makes it suitable for use in small type equipments such as HICs. PACKAGE DIMENSIONS in millimeters 2.1 ±0.1 1.25 ±0.1 Low Noise : NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 µA, f = 1.0 GHz High Gain : |S21e|2 = 6.5 dB TYP. @VCE = 1 V, IC = 1 mA, f = 1.0 GHz Small Package 0.65 0.65 2.0 ±0.2 0.3 +0.1 –0 FEATURES 2 0.3 +0.1 –0 0.15 +0.1 –0.05 1 3 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 15 8 2 5 50 150 –65 to +150 V V V mA mW ˚ C ˚ C 0.9 ±0.1 0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Marking 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance Insertion Power Gain Noise Figure Symbol ICBO IEBO hFE fT Cre |S21e| NF 2 MIN. TYP. MAX. 0.1 0.1 Unit Test Conditions VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 250 µA, pulsed µA µA 50 100 4.0 0.5 250 GHz 0.7 pF dB 4.5 dB VCE = 1 V, IC = 1 mA, f = 1...