Preliminary Datasheet
RJK1212DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free R07DS0091EJ0100 Rev.1.00 Jun 18, 2011
Outline
RENESAS Package code: PWSN0008DC-A (Packag...
