RJK1526DPJ

RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L) 4 : PRSS0004AE-B LDPAK(S)-(1) 4 : PRSS0004AE-C LDPAK(S)-(2) ) 4 D G 1 1 2 3 1 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 RJK1526DPJ RJK1526DPE www.DataSheet.co.kr RJK1526DPF Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 150 ±30 50 120 50 120 25 46.8 100 1.25 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.net/ RJK1526DPJ, RJK1526DPE, RJK1526DPF Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance...