Preliminary Datasheet
RJK1560DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
Capable of 2.5 V gate drive Low on-resistance RDS(on) = 0.043 typ. (at ID = 10 A, VGS = 4 V, Ta = 25C) Low leakage current High speed switching R07DS0270EJ0100 Rev.1.00 Mar 07, 2011
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)...
