RJK2017DPP

RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 μs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area Symbol VDSS VGSS ID Note4 ID (pulse) Note1 IDR IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 45 135 45 12 9.6 30 4.17 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.net/ RJK2017DPP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5....