RJK4515DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.171 Ω typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching REJ03G1869-0100 Rev.1.00 Dec 08, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
w...
