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RJK5033DPD Dataheets PDF



Part Number RJK5033DPD
Manufacturers Renesas
Logo Renesas
Description N-Channel Power MOSFET
Datasheet RJK5033DPD DatasheetRJK5033DPD Datasheet (PDF)

Preliminary Datasheet RJK5033DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 0.96  typ. (ID = 3 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 500 30 6 24 6 65 1.92 150 –55 to +150 Unit V V A A A W C/W C C Item Dra.

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Preliminary Datasheet RJK5033DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 0.96  typ. (ID = 3 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 500 30 6 24 6 65 1.92 150 –55 to +150 Unit V V A A A W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse) Note3 IAP Pch Note 2  ch-c Tch Tstg Note1 R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK5033DPD Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V (BR) DSS IDSS IGSS VGS (off) RDS (on) Ciss Coss Crss td(on) tr td (off) tf VDF trr Min 500 — — 3.5 — — — — — — — — — — Typ — — — — 0.96 600 70 10 15 20 90 30 0.9 250 Max — 1 0.1 4.5 1.3 — — — — — — — 1.5 — Unit V A A V  pF pF pF ns ns ns ns V ns Test Conditions ID = 1 mA, VGS = 0 VDS = 505 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1 MHz VDD = 200 V ID = 3 A VGS = 10 V Rg = 10  IF = 6 A, VGS = 0 Note 4 IF = 6 A, VGS = 0 VDD = 250 V diF/dt = 100 A/s Note: 4. Pulse test www.DataSheet.co.kr R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Page 2 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK5033DPD Preliminary Main Characteristics Maximum Safe Operation Area 1000 Tc = 25°C 1 shot 12 10 8 6 4 2 0 0 4 8 12 16 20 Ta = 25°C Pulse Test Typical Output Characteristics 10 V 8V 7V 6.8 V 6.6 V 6.4 V 6.2 V 6V ID (A) 100 10 10 PW μs Drain Current 10 0 1 Operation in this area is limited by RDS(on) 1 10 100 μs 0.1 Drain Current = ID (A) VGS = 5.8 V 0.01 0.1 1000 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test Tc = −25°C 25°C 75°C 6 4 2 0 0 2 4 6 8 10 Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 12 10 8 Drain Current ID (A) 1 www.DataSheet.co.kr VGS = 10 V Ta = 25°C Pulse Test 0.1 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature (Typical) 3.0 2.5 2.0 1.5 1.0 0.5 0 −25 1A VGS = 10 V Pulse Test ID = 6 A 1000 Body-Drain Diode Reverse Recovery Time (Typical) Reverse Recovery Time trr (ns) 3A 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Drain Current IDR (A) R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Page 3 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK5033DPD Typical Capacitance vs. Drain to Source Voltage VDS (V) 10000 VGS = 0 Tc = 25°C f = 1 MHz Ciss Preliminary Dynamic Input Characteristics (Typical) ID = 6 A Ta = 25°C Capacitance C (pF) 1000 600 VDS VDD = 100 V 200 V 400 V 12 Drain to Source Voltage 100 Coss 10 Crss 1 0 400 8 200 VDD = 400 V 200 V 100 V 0 8 16 24 32 4 0 0 40 50 100 150 200 250 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage (Typical) 24 5 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) ID = 10 mA 4 IDR (A) 20 16 12 8 4 0 0 Reverse Drain Current Gate to Source Cutoff Voltage VGS(off) (V) VGS = 0 Ta = 25°C Pulse Test 3 1 mA 0.1 mA 2 www.DataSheet.co.kr 1 VDS = 10 V 0 -25 0 25 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Page 4 of 6 Gate to Source Voltage VGS (V) 800 VGS 16 Datasheet pdf - http://www.DataSheet4U.net/ RJK5033DPD Thermal Impedance vs. Pulse Width Thermal Impedance θch – c (°C/W) 10 Preliminary 1 0.1 0.01 Tc = 25°C Single pulse 0.001 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 200 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(on) www.DataSheet.co.kr 90% td(off) tf tr R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Page 5 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK5033DPD Preliminary Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESA.


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