Document
Preliminary Datasheet
RJK5033DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Source Drain
D
G
12
3
S
Absolute Maximum Ratings
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(Ta = 25C)
Value 500 30 6 24 6 65 1.92 150 –55 to +150 Unit V V A A A W C/W C C
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch 150C
Symbol VDSS VGSS ID ID (pulse) Note3 IAP Pch Note 2 ch-c Tch Tstg
Note1
R07DS0179EJ0100 Rev.1.00 Oct 05, 2010
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RJK5033DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V (BR) DSS IDSS IGSS VGS (off) RDS (on) Ciss Coss Crss td(on) tr td (off) tf VDF trr Min 500 — — 3.5 — — — — — — — — — — Typ — — — — 0.96 600 70 10 15 20 90 30 0.9 250 Max — 1 0.1 4.5 1.3 — — — — — — — 1.5 — Unit V A A V pF pF pF ns ns ns ns V ns Test Conditions ID = 1 mA, VGS = 0 VDS = 505 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1 MHz VDD = 200 V ID = 3 A VGS = 10 V Rg = 10 IF = 6 A, VGS = 0 Note 4 IF = 6 A, VGS = 0 VDD = 250 V diF/dt = 100 A/s
Note:
4. Pulse test
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R07DS0179EJ0100 Rev.1.00 Oct 05, 2010
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RJK5033DPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000 Tc = 25°C 1 shot 12 10 8 6 4 2 0 0 4 8 12 16 20 Ta = 25°C Pulse Test
Typical Output Characteristics
10 V 8V 7V 6.8 V 6.6 V 6.4 V 6.2 V 6V
ID (A)
100
10
10
PW
μs
Drain Current
10
0
1 Operation in this area is limited by RDS(on) 1 10 100
μs
0.1
Drain Current
=
ID (A)
VGS = 5.8 V
0.01 0.1
1000
Drain to Source Voltage
VDS (V)
Drain to Source Voltage
VDS (V)
Typical Transfer Characteristics
VDS = 10 V Pulse Test Tc = −25°C 25°C 75°C 6 4 2 0 0 2 4 6 8 10
Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) (Ω)
10
12 10 8
Drain Current
ID (A)
1
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VGS = 10 V Ta = 25°C Pulse Test 0.1 1 10 100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Static Drain to Source on State Resistance RDS(on) (Ω)
Static Drain to Source on State Resistance vs. Temperature (Typical)
3.0 2.5 2.0 1.5 1.0 0.5 0 −25 1A VGS = 10 V Pulse Test ID = 6 A 1000
Body-Drain Diode Reverse Recovery Time (Typical)
Reverse Recovery Time trr (ns)
3A
100
di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
IDR (A)
R07DS0179EJ0100 Rev.1.00 Oct 05, 2010
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RJK5033DPD
Typical Capacitance vs. Drain to Source Voltage
VDS (V)
10000 VGS = 0 Tc = 25°C f = 1 MHz Ciss
Preliminary
Dynamic Input Characteristics (Typical)
ID = 6 A Ta = 25°C
Capacitance C (pF)
1000
600 VDS VDD = 100 V 200 V 400 V
12
Drain to Source Voltage
100 Coss 10 Crss 1 0
400
8
200
VDD = 400 V 200 V 100 V 0 8 16 24 32
4
0
0 40
50
100
150
200
250
Drain to Source Voltage
VDS (V)
Gate Charge
Qg (nC)
Reverse Drain Current vs. Source to Drain Voltage (Typical)
24 5
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
ID = 10 mA 4
IDR (A)
20 16 12 8 4 0 0
Reverse Drain Current
Gate to Source Cutoff Voltage VGS(off) (V)
VGS = 0 Ta = 25°C Pulse Test
3
1 mA 0.1 mA
2
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1 VDS = 10 V 0 -25 0 25
0.4
0.8
1.2
1.6
2.0
50
75
100 125 150
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (°C)
R07DS0179EJ0100 Rev.1.00 Oct 05, 2010
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Gate to Source Voltage
VGS (V)
800
VGS
16
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RJK5033DPD
Thermal Impedance vs. Pulse Width
Thermal Impedance θch – c (°C/W)
10
Preliminary
1
0.1
0.01 Tc = 25°C Single pulse 0.001 10 μ 100 μ 1m 10 m 100 m 1 10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 200 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10%
90% td(on)
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90% td(off) tf
tr
R07DS0179EJ0100 Rev.1.00 Oct 05, 2010
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RJK5033DPD
Preliminary
Package Dimensions
Package Name MP-3A JEITA Package Code SC-63 RENESA.