RJK6034DPD-E0

Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse)Note1 IAP Note3 Pch Note2 ch-c Tch Tstg Ratings 600 30 1 2 1 36.7 3.4 150 –55 to +150 Unit V V A A A W C/W C C R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK6034DPD-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test ...