RJP30H1DPD

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E C G 12 3 Absolute Maximum Ratings (Tc = 25°C) www.DataSheet.co.kr Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C Symbol VCES VGES IC ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 30 200 40 3.13 150 –55 to +150 Unit V V A A W °C/W °C °C R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJP30H1DPD Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Min — — 2.5 — — — — — — — — — — — Typ ...