RJP60F0DPE

Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emitter 4. Collector www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 PC j-c Tj Tstg Ratings 600 ±30 50 25 100 122 1.02 150 –55 to +150 Unit V V A A A W °C/W °C °C R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJP60F0DPE Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min — — 4 — —        Typ — — — 1.4 1....