RJP60F4DPM

Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 PC j-c Tj Tstg Ratings 600 30 60 30 120 41.2 3.03 150 –55 to +150 Unit V V A A A W °C/W °C °C R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJP60F4DPM Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min   4          Typ    1.4 1.7 1900 70 33 45 150 70 80 Max 100 ±1 8 1.82         Unit A A V V V pF pF pF ns ns ns ns Test...