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RJP60F5DPM Dataheets PDF



Part Number RJP60F5DPM
Manufacturers Renesas
Logo Renesas
Description N-Channel IGBT
Datasheet RJP60F5DPM DatasheetRJP60F5DPM Datasheet (PDF)

Preliminary Datasheet RJP60F5DPM 600 V - 40 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter volta.

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