TBB1004

TBB1004 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-988H (Z) 9th. Edition Dec. 2000 Features Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-6 Outline CMPAK-6 www.DataSheet.co.kr 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Gate-1(1) 4. Gate-1(2) 5. Gate-2 6. Drain(2) Notes: 1. 2. Marking is “DM”. TBB1004 is individual type number of HITACHI TWIN BBFET. Datasheet pdf - http://www.DataSheet4U.net/ TBB1004 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg *3 Ratings 6 +6 -0 +6 -0 30 250 150 –55 to +150 Unit V V V mA mW °C °C Notes: 3. Value on the glass epoxy board (49mm × 38mm × 1mm). Electrical Characteristics (Ta = 25°C) The below specification are applicable for UHF unit (FET1) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.5 0.5 13 21 1.4 1.0 — 16 Typ — — — — — 0.7 0.7 17 26 1.8 1.4 0.02 21 www.DataSheet.co.kr Max — — — +100 +100 1.0 1.0 21 31 2.2 1.8 0.04 — Unit V V V nA...