Document
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
High emitter-base voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package
Absolute Maximum Ratings (Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
VCBO
50
V
VCEO
20
V
VEBO
25
V
IC
300
mA
IB
60
mA
PC (Note 1, 3)
200
mW
PC (Note 2)
100
Tj (Note 1)
150
°C
Tj (Note 2)
125
Tstg (Note 1) 55 to 150 °C
Tstg (Note 2) 55 to 125
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1:For devices with the ordering part number ending in LF(T. Note 2:For devices with the ordering part number in other than LF(T. Note 3:Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.5 mm2 × 3)
Marking
© 2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1987-05
2021-06-25
Electrical Characteristics (Ta 25°C)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB 50 V, IE 0 A
IEBO
VEB 25 V, IC 0 A
hFE (Note)
VCE 2 V, IC 4 mA
VCE (sat) IC 30 mA, IB 3 mA
VBE
VCE 2 V, IC 4 mA
fT
VCE 6 V, IC 4 mA
Cob
VCB 10 V, IE 0 A, f 1 MHz
Turn-on time
ton
Switching time Storage time
tstg
Fall time
tf Duty cycle ≤ 2%
Note: hFE classification A: 200 to 700, B: 350 to 1200
2SC4213
Min Typ. Max Unit
0.1
A
0.1
A
200 1200
0.042 0.1
V
0.61
V
30
MHz
4.8
7
pF
160
500
ns
130
© 2021
2
Toshiba Electronic Devices & Storage Corporation
2021-06-25
2SC4213
© 2021
3
Toshiba Electronic Devices & Storage Corporation
2021-06-25
A
(Note)
2SC4213
(Note)
Note: Reference only with Tj of 125 ℃.
Note: Reference only with Tj of 150 ℃.
The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
© 2021
4
Toshiba Electronic Devices & Storage Corporation
2021-06-25
2SC4213
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evalu.